STMicroelectronics SuperMESH Type N-Channel MOSFET, 2 A, 600 V Enhancement, 3-Pin TO-252 STD2HNK60Z

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Subtotal (1 tape of 20 units)*

Kr. 242,18

(exc. VAT)

Kr. 302,72

(inc. VAT)

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  • 2 400 unit(s) ready to ship
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Units
Per unit
Per Tape*
20 - 180Kr. 12,109Kr. 242,18
200 - 480Kr. 11,492Kr. 229,84
500 - 980Kr. 10,645Kr. 212,90
1000 - 1980Kr. 9,821Kr. 196,42
2000 +Kr. 9,45Kr. 189,00

*price indicative

Packaging Options:
RS Stock No.:
151-935
Mfr. Part No.:
STD2HNK60Z
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

2A

Maximum Drain Source Voltage Vds

600V

Series

SuperMESH

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

4.8Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

11nC

Forward Voltage Vf

1.6V

Maximum Operating Temperature

150°C

Length

10.1mm

Standards/Approvals

RoHS

Height

2.4mm

Automotive Standard

No

COO (Country of Origin):
CN
The STMicroelectronics Power MOSFET developed using Super MESH technology, achieved through optimization of well established strip based Power MESH layout. In addition to a significant reduction in on resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.

100% avalanche tested

Gate charge minimized

Very low intrinsic capacitance

Zener protected

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