STMicroelectronics SCT Type N-Channel MOSFET, 30 A, 1200 V Enhancement, 7-Pin H2PAK-7 SCT070H120G3-7
- RS Stock No.:
- 214-960
- Mfr. Part No.:
- SCT070H120G3-7
- Brand:
- STMicroelectronics
Subtotal (1 reel of 1000 units)*
Kr.121 878 00
(exc. VAT)
Kr.152 348 00
(inc. VAT)
FREE delivery for online orders over 500,00 kr
Temporarily out of stock
- 1 000 unit(s) shipping from 25. februar 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 1000 + | Kr. 121,878 | Kr. 121 878,00 |
*price indicative
- RS Stock No.:
- 214-960
- Mfr. Part No.:
- SCT070H120G3-7
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | SCT | |
| Package Type | H2PAK-7 | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 63mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 37nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 224W | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Forward Voltage Vf | 3V | |
| Maximum Operating Temperature | 175°C | |
| Length | 15.25mm | |
| Width | 10.4 mm | |
| Standards/Approvals | RoHS | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series SCT | ||
Package Type H2PAK-7 | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 63mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 37nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 224W | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Forward Voltage Vf 3V | ||
Maximum Operating Temperature 175°C | ||
Length 15.25mm | ||
Width 10.4 mm | ||
Standards/Approvals RoHS | ||
- COO (Country of Origin):
- CN
The STMicroelectronics Silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
High speed switching performances
Very fast and robust intrinsic body diode
Related links
- STMicroelectronics SCT Type N-Channel MOSFET 1200 V Enhancement, 7-Pin H2PAK-7 SCT070H120G3-7
- STMicroelectronics SCT Type N-Channel MOSFET 1200 V Enhancement, 7-Pin H2PAK-7 SCT070H120G3AG
- STMicroelectronics SCT Type N-Channel MOSFET 1200 V Enhancement, 7-Pin H2PAK-7
- STMicroelectronics SCT Type N-Channel MOSFET 1200 V Enhancement, 7-Pin H2PAK-7 SCT040H120G3AG
- STMicroelectronics SCT Type N-Channel MOSFET 650 V Enhancement, 7-Pin H2PAK-7
- STMicroelectronics SCT Type N-Channel MOSFET 650 V Enhancement, 7-Pin H2PAK-7
- STMicroelectronics SCT Type N-Channel MOSFET 900 V Enhancement, 7-Pin H2PAK-7 SCT012H90G3AG
- STMicroelectronics SCT Type N-Channel MOSFET 650 V Enhancement, 7-Pin H2PAK-7 SCT027H65G3AG