STMicroelectronics SCT 1 Type N-Channel MOSFET Enhancement, 4-Pin Hip-247-4 SCT070W120G3-4
- RS Stock No.:
- 214-964
- Mfr. Part No.:
- SCT070W120G3-4
- Brand:
- STMicroelectronics
Subtotal (1 unit)*
Kr.163 59
(exc. VAT)
Kr.204 49
(inc. VAT)
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Units | Per unit |
|---|---|
| 1 + | Kr. 163,59 |
*price indicative
- RS Stock No.:
- 214-964
- Mfr. Part No.:
- SCT070W120G3-4
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Series | SCT | |
| Package Type | Hip-247-4 | |
| Pin Count | 4 | |
| Channel Mode | Enhancement | |
| Number of Elements per Chip | 1 | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Series SCT | ||
Package Type Hip-247-4 | ||
Pin Count 4 | ||
Channel Mode Enhancement | ||
Number of Elements per Chip 1 | ||
- COO (Country of Origin):
- CN
The STMicroelectronics Silicon carbide Power MOSFET device has been developed using STs Advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
High speed switching performances
Very fast and robust intrinsic body diode
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