STMicroelectronics SCT Type N-Channel MOSFET, 30 A, 1200 V Enhancement, 4-Pin SCT070W120G3-4AG

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Subtotal (1 tube of 30 units)*

Kr.4 943 01 

(exc. VAT)

Kr.6 178 77 

(inc. VAT)

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30 +Kr. 164,767Kr. 4 943,01

*price indicative

RS Stock No.:
215-244
Mfr. Part No.:
SCT070W120G3-4AG
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

30A

Maximum Drain Source Voltage Vds

1200V

Series

SCT

Mount Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance Rds

63mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

-10 to 22 V

Maximum Power Dissipation Pd

236W

Typical Gate Charge Qg @ Vgs

41nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

200°C

Standards/Approvals

AEC-Q101

Automotive Standard

AEC-Q101

COO (Country of Origin):
CN
The STMicroelectronics Silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.

Extremely low gate charge and input capacitance

Very fast and robust intrinsic body diode

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