STMicroelectronics SCT Type N-Channel MOSFET, 29 A, 1200 V Enhancement, 4-Pin SCT015W120G3-4AG
- RS Stock No.:
- 215-222
- Mfr. Part No.:
- SCT015W120G3-4AG
- Brand:
- STMicroelectronics
Subtotal (1 tube of 30 units)*
Kr.20 869 89
(exc. VAT)
Kr.26 087 37
(inc. VAT)
FREE delivery for online orders over 500,00 kr
Temporarily out of stock
- Shipping from 02. september 2026
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Units | Per unit | Per Tube* |
|---|---|---|
| 30 + | Kr. 695,663 | Kr. 20 869,89 |
*price indicative
- RS Stock No.:
- 215-222
- Mfr. Part No.:
- SCT015W120G3-4AG
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 29A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | SCT | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 20mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 167nC | |
| Maximum Power Dissipation Pd | 673W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 4.2 V | |
| Maximum Operating Temperature | 200°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 29A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series SCT | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 20mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 167nC | ||
Maximum Power Dissipation Pd 673W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 4.2 V | ||
Maximum Operating Temperature 200°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The STMicroelectronics Silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
Extremely low gate charge and input capacitance
Very fast and robust intrinsic body diode
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