STMicroelectronics SCT Type N-Channel MOSFET, 29 A, 1200 V Enhancement, 4-Pin

View all MOSFETs
Bulk discount available

Subtotal (1 unit)*

Kr.698 98 

(exc. VAT)

Kr.873 72 

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 7 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
1 - 9Kr. 698,98
10 +Kr. 629,20

*price indicative

Packaging Options:
RS Stock No.:
215-223
Mfr. Part No.:
SCT015W120G3-4AG
Brand:
STMicroelectronics
Find similar products by selecting one or more attributes.
Select all

Brand

STMicroelectronics

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

29A

Maximum Drain Source Voltage Vds

1200V

Series

SCT

Mount Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance Rds

20mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

4.2 V

Maximum Power Dissipation Pd

673W

Typical Gate Charge Qg @ Vgs

167nC

Maximum Operating Temperature

200°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The STMicroelectronics Silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.

Extremely low gate charge and input capacitance

Very fast and robust intrinsic body diode

Related links