STMicroelectronics SCT Type N-Channel MOSFET, 30 A, 650 V Enhancement, 4-Pin SCT040W65G3-4
- RS Stock No.:
- 366-221
- Mfr. Part No.:
- SCT040W65G3-4
- Brand:
- STMicroelectronics
Bulk discount available
Subtotal (1 unit)*
Kr.159 09
(exc. VAT)
Kr.198 86
(inc. VAT)
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In Stock
- Plus 60 unit(s) shipping from 26. januar 2026
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Units | Per unit |
|---|---|
| 1 - 9 | Kr. 159,09 |
| 10 - 99 | Kr. 143,17 |
| 100 + | Kr. 132,06 |
*price indicative
- RS Stock No.:
- 366-221
- Mfr. Part No.:
- SCT040W65G3-4
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Operating Frequency | 1 MHz | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Output Power | 240W | |
| Series | SCT | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 200°C | |
| Height | 5.1mm | |
| Width | 15.9 mm | |
| Length | 20.1mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Operating Frequency 1 MHz | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 650V | ||
Output Power 240W | ||
Series SCT | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 200°C | ||
Height 5.1mm | ||
Width 15.9 mm | ||
Length 20.1mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics Silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
Very low RDS(on) over the entire temperature range
High speed switching performances
Very fast and robust intrinsic body diode
Very high operating junction temperature capability
Source sensing pin for increased efficiency
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