STMicroelectronics STL125N10F8AG Type N-Channel MOSFET, 125 A, 100 V Enhancement, 8-Pin PowerFLAT STL125N10F8AG
- RS Stock No.:
- 214-996
- Mfr. Part No.:
- STL125N10F8AG
- Brand:
- STMicroelectronics
Bulk discount available
Subtotal (1 unit)*
Kr.31 00
(exc. VAT)
Kr.38 75
(inc. VAT)
FREE delivery for online orders over 500,00 kr
Temporarily out of stock
- 3 000 unit(s) shipping from 21. januar 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 9 | Kr. 31,00 |
| 10 - 99 | Kr. 27,91 |
| 100 - 499 | Kr. 25,85 |
| 500 - 999 | Kr. 23,91 |
| 1000 + | Kr. 21,39 |
*price indicative
- RS Stock No.:
- 214-996
- Mfr. Part No.:
- STL125N10F8AG
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 125A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | PowerFLAT | |
| Series | STL125N10F8AG | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 4.6mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 56nC | |
| Maximum Power Dissipation Pd | 150W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS, AEC-Q101 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 125A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type PowerFLAT | ||
Series STL125N10F8AG | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 4.6mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 56nC | ||
Maximum Power Dissipation Pd 150W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS, AEC-Q101 | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
The STMicroelectronics 100 V N-channel enhancement mode Power MOSFET designed in STripFET F8 technology featuring an enhanced trench gate structure. It ensures a state-of-the-art of figure of merit for very low on-state resistance while reducing internal capacitances and gate charge for Faster and more efficient switching.
Low gate charge Qg
Wettable flank package
Related links
- STMicroelectronics STL125N10F8AG N-Channel MOSFET 100 V, 8-Pin PowerFLAT STL125N10F8AG
- STMicroelectronics N-Channel MOSFET 100 V, 8-Pin PowerFLAT 5x6 STL120N10F8
- STMicroelectronics STripFET F3 N-Channel MOSFET 100 V, 8-Pin PowerFLAT 5 x 6 STL8N10LF3
- STMicroelectronics STL N-Channel MOSFET 100 V, 8-Pin PowerFLAT 5x6 STL165N10F8AG
- STMicroelectronics STripFET H7 N-Channel MOSFET 100 V, 8-Pin PowerFLAT 5 x 6 STL110N10F7
- STMicroelectronics STripFET H7 N-Channel MOSFET 100 V, 8-Pin PowerFLAT 5 x 6 STL30N10F7
- STMicroelectronics STripFET H7 N-Channel MOSFET 100 V, 8-Pin PowerFLAT 5 x 6 STL60N10F7
- STMicroelectronics STL N-Channel MOSFET 40 V, 8-Pin PowerFLAT 5x6 STL300N4LF8
