Nexperia NextPowerS3 Technology Type N-Channel MOSFET, 100 A, 30 V Enhancement, 5-Pin LFPAK PSMN1R4-30YLDX

Subtotal (1 reel of 1500 units)*

Kr.13 584 00 

(exc. VAT)

Kr.16 980 00 

(inc. VAT)

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Per Reel*
1500 +Kr. 9,056Kr. 13 584,00

*price indicative

RS Stock No.:
219-401
Mfr. Part No.:
PSMN1R4-30YLDX
Brand:
Nexperia
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Brand

Nexperia

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

100A

Maximum Drain Source Voltage Vds

30V

Package Type

LFPAK

Series

NextPowerS3 Technology

Mount Type

Surface

Pin Count

5

Maximum Drain Source Resistance Rds

1.42mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

27.6nC

Maximum Power Dissipation Pd

166W

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
PH
The Nexperia N-Channel MOSFET features NextPowerS3 portfolio utilising NXP's unique SchottkyPlus technology delivers high efficiency, low spiking performance usually associated with MOSFETS with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies.

Low parasitic inductance and resistance

High reliability clip bonded and solder die attach Power SO8 package

Wave solder able

Superfast switching with soft recovery

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