onsemi NTMFS3 Type N-Channel MOSFET, 135 A, 80 V Enhancement, 5-Pin DFN-5 NTMFS3D5N08XT1G
- RS Stock No.:
- 220-551
- Mfr. Part No.:
- NTMFS3D5N08XT1G
- Brand:
- onsemi
Bulk discount available
Subtotal (1 tape of 5 units)*
Kr.91 98
(exc. VAT)
Kr.114 975
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- 1 500 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tape* |
|---|---|---|
| 5 - 45 | Kr. 18,396 | Kr. 91,98 |
| 50 - 95 | Kr. 17,434 | Kr. 87,17 |
| 100 - 495 | Kr. 16,176 | Kr. 80,88 |
| 500 - 995 | Kr. 14,872 | Kr. 74,36 |
| 1000 + | Kr. 14,392 | Kr. 71,96 |
*price indicative
- RS Stock No.:
- 220-551
- Mfr. Part No.:
- NTMFS3D5N08XT1G
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 135A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | NTMFS3 | |
| Package Type | DFN-5 | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 3mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 119W | |
| Typical Gate Charge Qg @ Vgs | 38nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Height | 1mm | |
| Length | 6.15mm | |
| Width | 5.15 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 135A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series NTMFS3 | ||
Package Type DFN-5 | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 3mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 119W | ||
Typical Gate Charge Qg @ Vgs 38nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Height 1mm | ||
Length 6.15mm | ||
Width 5.15 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The ON Semiconductor Power MOSFET Technology with best-in-class On-Resistance for motor driver application. Lower On-Resistance and less gate charge can reduce conduction loss and driving loss. Good softness control for body diode reverse recovery can reduce voltage spike stress without extra snubber circuit in application.
Halogen Free
RoHS Compliant
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