onsemi NTBL Type N-Channel MOSFET, 46 A, 650 V Enhancement, 8-Pin HPSOF-8L NTBL060N065SC1
- RS Stock No.:
- 220-562
- Mfr. Part No.:
- NTBL060N065SC1
- Brand:
- onsemi
Bulk discount available
Subtotal (1 tape of 1 unit)*
Kr.92 78
(exc. VAT)
Kr.115 98
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 2 000 unit(s) shipping from 19. januar 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Tape(s) | Per Tape |
|---|---|
| 1 - 9 | Kr. 92,78 |
| 10 - 99 | Kr. 83,51 |
| 100 - 499 | Kr. 76,99 |
| 500 - 999 | Kr. 71,50 |
| 1000 + | Kr. 58,12 |
*price indicative
- RS Stock No.:
- 220-562
- Mfr. Part No.:
- NTBL060N065SC1
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 46A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | NTBL | |
| Package Type | HPSOF-8L | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 60mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 22.6 V | |
| Typical Gate Charge Qg @ Vgs | 74nC | |
| Forward Voltage Vf | 4.3V | |
| Maximum Power Dissipation Pd | 170W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Width | 10.38 mm | |
| Height | 2.3mm | |
| Length | 9.9mm | |
| Standards/Approvals | RoHS Compliant | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 46A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series NTBL | ||
Package Type HPSOF-8L | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 60mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 22.6 V | ||
Typical Gate Charge Qg @ Vgs 74nC | ||
Forward Voltage Vf 4.3V | ||
Maximum Power Dissipation Pd 170W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Width 10.38 mm | ||
Height 2.3mm | ||
Length 9.9mm | ||
Standards/Approvals RoHS Compliant | ||
- COO (Country of Origin):
- PH
The ON Semiconductor Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
High Speed Switching with Low Capacitance
RoHS Compliant
Related links
- onsemi NTBL Type N-Channel MOSFET 650 V Enhancement, 8-Pin HPSOF-8L NTBL075N065SC1
- onsemi EliteSiC Type N-Channel MOSFET 650 V N, 8-Pin HPSOF-8L NTBL032N065M3S
- onsemi EliteSiC Type N-Channel MOSFET 650 V N, 8-Pin HPSOF-8L NTBL023N065M3S
- onsemi NTB Type N-Channel MOSFET 1200 V Enhancement, 7-Pin HPSOF-8L
- onsemi NTB Type N-Channel MOSFET 1200 V Enhancement, 7-Pin HPSOF-8L NTBL045N065SC1
- STMicroelectronics Type N-Channel MOSFET 600 V Enhancement, 8-Pin TO-LL
- Infineon OptiMOS Type N-Channel MOSFET 60 V Enhancement, 8-Pin TDSON
- onsemi NTMFS4C10N Type N-Channel MOSFET 30 V Enhancement, 8-Pin SO-8FL NTMFS4C10NT1G