onsemi NXH Type N-Channel MOSFET, 191 A, 1200 V Enhancement, 36-Pin PIM36 NXH006P120M3F2PTHG

Subtotal (1 pack of 1 unit)*

Kr.1 858 08 

(exc. VAT)

Kr.2 322 60 

(inc. VAT)

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1 +Kr. 1 858,08

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Packaging Options:
RS Stock No.:
220-575
Mfr. Part No.:
NXH006P120M3F2PTHG
Brand:
onsemi
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Brand

onsemi

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

191A

Maximum Drain Source Voltage Vds

1200V

Package Type

PIM36

Series

NXH

Pin Count

36

Maximum Drain Source Resistance Rds

6.5mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

622nC

Maximum Gate Source Voltage Vgs

22 V

Maximum Power Dissipation Pd

556W

Forward Voltage Vf

7.5V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

175°C

Height

16.5mm

Length

51mm

Width

62.8 mm

Standards/Approvals

Halide Free, RoHS, Pb-Free

Automotive Standard

No

The ON Semiconductor MOSFET is a power module containing 6 m ohm / 1200 V SiC MOSFET half−bridge and a thermistor with HPS DBC in an F2 package.

Halogen Free

RoHS Compliant

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