onsemi NXH Type N-Channel MOSFET, 145 A, 1200 V Enhancement, 18-Pin PIM18 NXH008P120M3F1PTG

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Subtotal (1 unit)*

Kr.1 457 23 

(exc. VAT)

Kr.1 821 54 

(inc. VAT)

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1 +Kr. 1 457,23

*price indicative

Packaging Options:
RS Stock No.:
277-050
Mfr. Part No.:
NXH008P120M3F1PTG
Brand:
onsemi
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Brand

onsemi

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

145A

Maximum Drain Source Voltage Vds

1200V

Series

NXH

Package Type

PIM18

Mount Type

Snap-in

Pin Count

18

Maximum Drain Source Resistance Rds

10.9mΩ

Channel Mode

Enhancement

Forward Voltage Vf

6.2V

Maximum Gate Source Voltage Vgs

22 V

Maximum Power Dissipation Pd

34.2W

Typical Gate Charge Qg @ Vgs

419nC

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

The ON Semiconductor Power Module contains an 8 mΩ, 1200V SiC MOSFET half-bridge and a thermistor, all housed in an F1 package. This module is designed for high-efficiency power applications, making it ideal for use in solar inverters, uninterruptible power supplies (UPS), electric vehicle charging stations, and industrial power systems.

Press fit pins

Pb free

Halide free and RoHS compliant

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