onsemi NXH Type N-Channel MOSFET, 149 A, 1200 V Enhancement, 34-Pin PIM34 NXH007F120M3F2PTHG
- RS Stock No.:
- 220-577
- Mfr. Part No.:
- NXH007F120M3F2PTHG
- Brand:
- onsemi
Subtotal (1 pack of 1 unit)*
Kr.1 947 55
(exc. VAT)
Kr.2 434 44
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- 20 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Pack(s) | Per Pack |
|---|---|
| 1 + | Kr. 1 947,55 |
*price indicative
- RS Stock No.:
- 220-577
- Mfr. Part No.:
- NXH007F120M3F2PTHG
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 149A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | NXH | |
| Package Type | PIM34 | |
| Pin Count | 34 | |
| Maximum Drain Source Resistance Rds | 10mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 6V | |
| Typical Gate Charge Qg @ Vgs | 407nC | |
| Maximum Power Dissipation Pd | 34.2W | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 149A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series NXH | ||
Package Type PIM34 | ||
Pin Count 34 | ||
Maximum Drain Source Resistance Rds 10mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 6V | ||
Typical Gate Charge Qg @ Vgs 407nC | ||
Maximum Power Dissipation Pd 34.2W | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The ON Semiconductor MOSFET is a power module containing 7 m ohm / 1200 V SiC MOSFET half−bridge and a thermistor with HPS DBC in an F2 package.
Halogen Free
RoHS Compliant
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