ROHM RJ1 1 Type N-Channel MOSFET, 80 A, 100 V Enhancement, 3-Pin TO-263AB RJ1P04BBHTL1

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Subtotal (1 tape of 5 units)*

Kr.114 86 

(exc. VAT)

Kr.143 575 

(inc. VAT)

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  • 100 unit(s) ready to ship
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Units
Per unit
Per Tape*
5 - 45Kr. 22,972Kr. 114,86
50 - 95Kr. 21,804Kr. 109,02
100 - 495Kr. 20,204Kr. 101,02
500 - 995Kr. 18,624Kr. 93,12
1000 +Kr. 17,892Kr. 89,46

*price indicative

Packaging Options:
RS Stock No.:
264-883
Mfr. Part No.:
RJ1P04BBHTL1
Brand:
ROHM
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Brand

ROHM

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

80A

Maximum Drain Source Voltage Vds

100V

Series

RJ1

Package Type

TO-263AB

Pin Count

3

Maximum Drain Source Resistance Rds

8.8mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

38.0nC

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

89W

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS Compliant

Number of Elements per Chip

1

The ROHM Nch 100V 80A TO-263AB power MOSFET with low on-resistance and high power small mold package, suitable for switching.

Low on-resistance

High power small mold package (TO263AB)

Pb-free plating and RoHS compliant

100% UIS tested

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