ROHM RJ1 1 Type N-Channel MOSFET, 120 A, 100 V Enhancement, 3-Pin TO-263AB RJ1P07CBHTL1

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Subtotal (1 tape of 2 units)*

Kr. 66,12

(exc. VAT)

Kr. 82,64

(inc. VAT)

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Units
Per unit
Per Tape*
2 - 18Kr. 33,06Kr. 66,12
20 - 198Kr. 29,80Kr. 59,60
200 - 998Kr. 27,515Kr. 55,03
1000 - 1998Kr. 25,51Kr. 51,02
2000 +Kr. 20,705Kr. 41,41

*price indicative

Packaging Options:
RS Stock No.:
264-884
Mfr. Part No.:
RJ1P07CBHTL1
Brand:
ROHM
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Brand

ROHM

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

120A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-263AB

Series

RJ1

Pin Count

3

Maximum Drain Source Resistance Rds

5.1mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

73.0nC

Maximum Power Dissipation Pd

135W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

±20 V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS Compliant

Number of Elements per Chip

1

The ROHM Nch 100V 120A TO-263AB power MOSFET with low on-resistance and high power small mold package, suitable for switching.

Low on-resistance

High power small mold package (TO263AB)

Pb-free plating and RoHS compliant

100% UIS tested

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