ROHM RJ1 1 Type N-Channel MOSFET, 120 A, 100 V Enhancement, 3-Pin TO-263AB RJ1P07CBHTL1

View all MOSFETs
Bulk discount available

Subtotal (1 tape of 2 units)*

Kr.66 12 

(exc. VAT)

Kr.82 64 

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • Plus 100 unit(s) shipping from 29. desember 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Tape*
2 - 18Kr. 33,06Kr. 66,12
20 - 198Kr. 29,80Kr. 59,60
200 - 998Kr. 27,515Kr. 55,03
1000 - 1998Kr. 25,51Kr. 51,02
2000 +Kr. 20,705Kr. 41,41

*price indicative

Packaging Options:
RS Stock No.:
264-884
Mfr. Part No.:
RJ1P07CBHTL1
Brand:
ROHM
Find similar products by selecting one or more attributes.
Select all

Brand

ROHM

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

120A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-263AB

Series

RJ1

Pin Count

3

Maximum Drain Source Resistance Rds

5.1mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

135W

Typical Gate Charge Qg @ Vgs

73.0nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Gate Source Voltage Vgs

±20 V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS Compliant

Number of Elements per Chip

1

The ROHM Nch 100V 120A TO-263AB power MOSFET with low on-resistance and high power small mold package, suitable for switching.

Low on-resistance

High power small mold package (TO263AB)

Pb-free plating and RoHS compliant

100% UIS tested

Related links