Infineon OptiMOS Type N-Channel MOSFET, 132 A, 60 V Enhancement, 8-Pin PG-WHSON-8 IQE030N06NM5SCATMA1
- RS Stock No.:
- 284-759
- Mfr. Part No.:
- IQE030N06NM5SCATMA1
- Brand:
- Infineon
Subtotal (1 reel of 6000 units)*
Kr.113 970 00
(exc. VAT)
Kr.142 464 00
(inc. VAT)
FREE delivery for online orders over 500,00 kr
Temporarily out of stock
- Shipping from 30. mars 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 6000 + | Kr. 18,995 | Kr. 113 970,00 |
*price indicative
- RS Stock No.:
- 284-759
- Mfr. Part No.:
- IQE030N06NM5SCATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 132A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PG-WHSON-8 | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 3mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 39nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 100W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | JEDEC, IEC61249-2-21, RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 132A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PG-WHSON-8 | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 3mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 39nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 100W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals JEDEC, IEC61249-2-21, RoHS | ||
Automotive Standard No | ||
The Infineon MOSFET features an optimos 5 power transistor is designed to excel in synchronous rectification applications, offering unparalleled performance and efficiency. With a robust design and state of the ART thermal management capabilities, this power MOSFET ensures reliable operation in demanding environments. Its superior thermal resistance makes it a prime choice for various industrial applications, ensuring that your systems operate with maximum reliability and minimal power loss. Fully compliant with RoHS regulations, this component prioritises eco friendliness while maintaining exceptional functionality.
High efficiency synchronous rectification
N channel configuration for effective performance
100% avalanche reliability tested
Halogen free materials for safer disposal
Wide industrial temperature range support
Minimal on state resistance reduces power loss
RoHS compliant for environmental sustainability
Related links
- Infineon OptiMOS SiC N-Channel MOSFET 60 V, 8-Pin PG-WHSON-8 IQE030N06NM5SCATMA1
- Infineon OptiMOS SiC N-Channel MOSFET 60 V, 8-Pin PG-WHSON-8 IQE022N06LM5SCATMA1
- Infineon OptiMOS SiC N-Channel MOSFET 80 V, 8-Pin PG-WHSON-8 IQE046N08LM5SCATMA1
- Infineon OptiMOS SiC N-Channel MOSFET 80 V, 8-Pin PG-WHSON-8 IQE050N08NM5SCATMA1
- Infineon OptiMOS SiC N-Channel MOSFET 100 V, 8-Pin PG-WHSON-8 IQE065N10NM5SCATMA1
- Infineon OptiMOS SiC N-Channel MOSFET 60 V, 9-Pin PG-WHTFN-9 IQE030N06NM5CGSCATMA1
- Infineon OptiMOS SiC N-Channel MOSFET 80 V, 8-Pin PG-TSON-8 IQE046N08LM5ATMA1
- Infineon OptiMOS SiC N-Channel MOSFET 40 V, 8-Pin PG-WSON-8 BSC007N04LS6SCATMA1