STMicroelectronics SCT0 Type N-Channel MOSFET, 100 A, 1200 V, 7-Pin H2PAK-7 SCT020H120G3AG
- RS Stock No.:
- 330-232
- Mfr. Part No.:
- SCT020H120G3AG
- Brand:
- STMicroelectronics
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Subtotal (1 unit)*
Kr.288 97
(exc. VAT)
Kr.361 21
(inc. VAT)
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In Stock
- 990 unit(s) ready to ship
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Units | Per unit |
|---|---|
| 1 - 9 | Kr. 288,97 |
| 10 - 99 | Kr. 260,15 |
| 100 + | Kr. 239,78 |
*price indicative
- RS Stock No.:
- 330-232
- Mfr. Part No.:
- SCT020H120G3AG
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | H2PAK-7 | |
| Series | SCT0 | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 18.5mΩ | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Forward Voltage Vf | 3V | |
| Typical Gate Charge Qg @ Vgs | 121nC | |
| Maximum Power Dissipation Pd | 555W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | AEC-Q101, RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type H2PAK-7 | ||
Series SCT0 | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 18.5mΩ | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Forward Voltage Vf 3V | ||
Typical Gate Charge Qg @ Vgs 121nC | ||
Maximum Power Dissipation Pd 555W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals AEC-Q101, RoHS | ||
Automotive Standard AEC-Q101 | ||
The STMicroelectronics silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
AEC-Q101 qualified
Very low RDS(on) over the entire temperature range
High speed switching performances
Very fast and robust intrinsic body diode
Source sensing pin for increased efficiency
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