STMicroelectronics SCT0 MOSFET, 30 A, 1200 V, 3-Pin Hip-247 SCT070W120G3AG

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Kr. 116,69

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Kr. 145,86

(inc. VAT)

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1 - 9Kr. 116,69
10 - 99Kr. 105,02
100 +Kr. 96,90

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Packaging Options:
RS Stock No.:
330-234
Mfr. Part No.:
SCT070W120G3AG
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Product Type

MOSFET

Maximum Continuous Drain Current Id

30A

Maximum Drain Source Voltage Vds

1200V

Series

SCT0

Package Type

Hip-247

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

63mΩ

Maximum Power Dissipation Pd

236W

Typical Gate Charge Qg @ Vgs

41nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

3V

Maximum Operating Temperature

200°C

Standards/Approvals

AEC-Q101

Automotive Standard

AEC-Q101

COO (Country of Origin):
CN
The STMicroelectronics silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.

AEC-Q101 qualified

Very low RDS(on) over the entire temperature range

High speed switching performances

Very fast and robust intrinsic body diode

Very high operating junction temperature capability TJ equal to 200 °C

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