STMicroelectronics SCT0 MOSFET, 30 A, 1.2 kV, 3-Pin Hip-247 SCT070W120G3AG
- RS Stock No.:
- 330-234
- Mfr. Part No.:
- SCT070W120G3AG
- Brand:
- STMicroelectronics
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Kr. 116,69
(exc. VAT)
Kr. 145,86
(inc. VAT)
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In Stock
- 60 unit(s) ready to ship
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Units | Per unit |
|---|---|
| 1 - 9 | Kr. 116,69 |
| 10 - 99 | Kr. 105,02 |
| 100 + | Kr. 96,90 |
*price indicative
- RS Stock No.:
- 330-234
- Mfr. Part No.:
- SCT070W120G3AG
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 1.2kV | |
| Package Type | Hip-247 | |
| Series | SCT0 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 63mΩ | |
| Typical Gate Charge Qg @ Vgs | 41nC | |
| Maximum Gate Source Voltage Vgs | 18V | |
| Forward Voltage Vf | 3V | |
| Maximum Power Dissipation Pd | 236W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 200°C | |
| Standards/Approvals | AEC-Q101 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 1.2kV | ||
Package Type Hip-247 | ||
Series SCT0 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 63mΩ | ||
Typical Gate Charge Qg @ Vgs 41nC | ||
Maximum Gate Source Voltage Vgs 18V | ||
Forward Voltage Vf 3V | ||
Maximum Power Dissipation Pd 236W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 200°C | ||
Standards/Approvals AEC-Q101 | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
The STMicroelectronics silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
AEC-Q101 qualified
Very low RDS(on) over the entire temperature range
High speed switching performances
Very fast and robust intrinsic body diode
Very high operating junction temperature capability TJ equal to 200 °C
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