Infineon IMT Type N-Channel MOSFET, 43 A, 650 V Enhancement, 4-Pin PG-LHSOF-4 IMTA65R050M2HXTMA1
- RS Stock No.:
- 349-058
- Mfr. Part No.:
- IMTA65R050M2HXTMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 unit)*
Kr.97 80
(exc. VAT)
Kr.122 25
(inc. VAT)
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- Shipping from 15. november 2027
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Units | Per unit |
|---|---|
| 1 - 9 | Kr. 97,80 |
| 10 - 99 | Kr. 88,09 |
| 100 - 499 | Kr. 81,22 |
| 500 - 999 | Kr. 75,39 |
| 1000 + | Kr. 67,38 |
*price indicative
- RS Stock No.:
- 349-058
- Mfr. Part No.:
- IMTA65R050M2HXTMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 43A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | IMT | |
| Package Type | PG-LHSOF-4 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 62mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 197W | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 22nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 43A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series IMT | ||
Package Type PG-LHSOF-4 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 62mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 197W | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 22nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The Infineon CoolSiC MOSFET 650 V G2 is built on Infineon’s robust 2nd generation Silicon Carbide trench technology, offering unparalleled performance, superior reliability, and exceptional ease of use. This MOSFET enables cost effective, highly efficient, and simplified designs, making it ideal for meeting the ever-growing demands of modern power systems and markets. Its advanced technology provides a powerful solution for achieving high system efficiency in a wide range of applications.
Ultra low switching losses
Robust against parasitic turn‑on even with 0 V turn off gate voltage
Flexible driving voltage and compatible with bipolar driving scheme
Robust body diode operation under hard commutation events
The .XT interconnection technology for best in class thermal performance
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