Infineon ISC Type N-Channel MOSFET, 88 A, 200 V Enhancement, 8-Pin PG-TSON-8 ISC130N20NM6ATMA1

RS Stock No.:: 349-148
Mfr. Part No.:: ISC130N20NM6ATMA1
Brand:: Infineon

Infineon ISC Type N-Channel MOSFET, 88 A, 200 V Enhancement, 8-Pin PG-TSON-8 ISC130N20NM6ATMA1

Bulk discount available

Subtotal (1 pack of 2 units)*

Kr.145 76

(exc. VAT)

Kr.182 20

(inc. VAT)

FREE delivery for online orders over 500,00 kr

In Stock

Plus 5 000 unit(s) shipping from 29. desember 2025

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
2 - 18	Kr. 72,88	Kr. 145,76
20 - 198	Kr. 65,61	Kr. 131,22
200 +	Kr. 60,52	Kr. 121,04

*price indicative

RS Stock No.:: 349-148
Mfr. Part No.:: ISC130N20NM6ATMA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	88A
	Maximum Drain Source Voltage Vds	200V
	Series	ISC
	Package Type	PG-TSON-8
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	13mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	39nC
	Maximum Power Dissipation Pd	242W
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	175°C
	Standards/Approvals	IEC61249-2-21, JEDEC, J-STD-020, RoHS
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 88A
	Maximum Drain Source Voltage Vds 200V
	Series ISC
	Package Type PG-TSON-8
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 13mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 39nC
	Maximum Power Dissipation Pd 242W
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature 175°C
	Standards/Approvals IEC61249-2-21, JEDEC, J-STD-020, RoHS
	Automotive Standard No

Datasheet - ISC130N20NM6ATMA1

COO (Country of Origin):: MY

The Infineon OptiMOS 6 Power Transistor is an N-channel, normal level MOSFET designed for high performance power applications. It features very low on-resistance (RDS(on)), which helps to minimize conduction losses and improve system efficiency. With an excellent gate charge x RDS(on) product (FOM), this transistor ensures optimized switching performance. It also offers very low reverse recovery charge (Qrr), reducing switching losses and enhancing overall efficiency in fast-switching circuits. Designed to operate at a 175°C temperature, it provides high reliability in demanding environments and offers superior thermal performance for robust operation.

Pb free lead plating and RoHS compliant

Halogen free according to IEC61249-2-21

MSL 1 classified according to J-STD-020

100% avalanche tested

Infineon ISC Type N-Channel MOSFET, 88 A, 200 V Enhancement, 8-Pin PG-TSON-8 ISC130N20NM6ATMA1

FREE delivery for online orders over 500,00 kr

Related links