Infineon OptiMOS-TM6 Type N-Channel MOSFET, 230 A, 40 V Enhancement, 10-Pin PG-LHDSO-10-1 IAUCN04S6N013TATMA1
- RS Stock No.:
- 349-164
- Mfr. Part No.:
- IAUCN04S6N013TATMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 5 units)*
Kr.102 63
(exc. VAT)
Kr.128 29
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 2 000 unit(s) shipping from 01. januar 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | Kr. 20,526 | Kr. 102,63 |
| 50 - 95 | Kr. 19,516 | Kr. 97,58 |
| 100 - 495 | Kr. 18,076 | Kr. 90,38 |
| 500 - 995 | Kr. 16,634 | Kr. 83,17 |
| 1000 + | Kr. 15,994 | Kr. 79,97 |
*price indicative
- RS Stock No.:
- 349-164
- Mfr. Part No.:
- IAUCN04S6N013TATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 230A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | PG-LHDSO-10-1 | |
| Series | OptiMOS-TM6 | |
| Mount Type | Surface | |
| Pin Count | 10 | |
| Maximum Drain Source Resistance Rds | 1.68mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 133W | |
| Typical Gate Charge Qg @ Vgs | 52nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 0.8V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | AEC-Q101, RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 230A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type PG-LHDSO-10-1 | ||
Series OptiMOS-TM6 | ||
Mount Type Surface | ||
Pin Count 10 | ||
Maximum Drain Source Resistance Rds 1.68mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 133W | ||
Typical Gate Charge Qg @ Vgs 52nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 0.8V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals AEC-Q101, RoHS | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- MY
The Infineon Automotive MOSFET is an OptiMOS power MOSFET specifically designed for automotive applications. It is an N-channel, enhancement mode device with normal level characteristics. The MOSFET undergoes extended qualification beyond AEC-Q101 standards and features enhanced electrical testing, ensuring reliable performance. Its robust design makes it suitable for demanding automotive environments, offering durability and efficiency in power management.
MSL1 up to 260°C peak reflow
175°C operating temperature
RoHS compliant
Potential application
Related links
- Infineon IAU N-Channel MOSFET 40 V, 10-Pin PG-LHDSO-10 IAUCN04S6N009TATMA1
- Infineon IAU N-Channel MOSFET 40 V, 10-Pin PG-LHDSO-10-3 IAUCN04S6N007TATMA1
- Infineon IAU N-Channel MOSFET 40 V, 10-Pin PG-LHDSO-10 IAUCN04S6N017TATMA1
- Infineon IAU N-Channel MOSFET 40 V, 5-Pin PG-HSOF-5 IAUAN04S7N007AUMA1
- Infineon IAU N-Channel MOSFET 80 V, 8-Pin PG-HSOF-8 IAUCN08S7N019ATMA1
- Infineon IAU N-Channel MOSFET 80 V, 4-Pin PG-HSOF-4 IAUMN08S5N012GAUMA1
- Infineon IAU N-Channel MOSFET 40 V, 5-Pin PG-HSOF-5 IAUAN04S7N004AUMA1
- Infineon IAU N-Channel MOSFET 40 V, 8-Pin PG-TDSON-8 IAUCN04S7N005ATMA1