Vishay EF Type N-Channel Single MOSFETs, 38 A, 600 V Enhancement, 8-Pin PowerPAK
- RS Stock No.:
- 653-078
- Mfr. Part No.:
- SIHR100N60EF-T1GE3
- Brand:
- Vishay
Bulk discount available
Subtotal (1 tape of 1 unit)*
Kr.76 88
(exc. VAT)
Kr.96 10
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 2 000 unit(s) shipping from 19. januar 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Tape(s) | Per Tape |
|---|---|
| 1 - 9 | Kr. 76,88 |
| 10 - 49 | Kr. 74,70 |
| 50 - 99 | Kr. 72,19 |
| 100 + | Kr. 62,35 |
*price indicative
- RS Stock No.:
- 653-078
- Mfr. Part No.:
- SIHR100N60EF-T1GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | Single MOSFETs | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 38A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | PowerPAK | |
| Series | EF | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.108Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 35nC | |
| Maximum Power Dissipation Pd | 347W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 8 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type Single MOSFETs | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 38A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type PowerPAK | ||
Series EF | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.108Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 35nC | ||
Maximum Power Dissipation Pd 347W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 8 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay 4th generation E Series Power MOSFET equipped with a fast body diode for enhanced switching efficiency. It offers a low figure of merit (FOM), reduced effective capacitance, and minimized switching and conduction losses. Packaged in PowerPAK 8x8LR, it's Ideal for server, telecom, lighting, industrial, and solar power applications.
Pb Free
Halogen free
RoHS compliant
Related links
- Vishay EF Type N-Channel Single MOSFETs 600 V Enhancement, 8-Pin PowerPAK SIHR100N60EF-T1GE3
- Vishay EF Type N-Channel Single MOSFETs 600 V Enhancement, 8-Pin PowerPAK
- Vishay EF Type N-Channel Single MOSFETs 600 V Enhancement, 8-Pin PowerPAK SIHR120N60EF-T1GE3
- Vishay EF Type N-Channel MOSFET 650 V Enhancement, 5-Pin PowerPAK 8 x 8
- Vishay EF Type N-Channel MOSFET 650 V Enhancement, 4-Pin PowerPAK 8 x 8
- Vishay EF Type N-Channel MOSFET 650 V Enhancement, 4-Pin PowerPAK 8 x 8
- Vishay EF Type N-Channel MOSFET 650 V Enhancement, 4-Pin PowerPAK 8 x 8 SIHH125N60EF-T1GE3
- Vishay EF Type N-Channel MOSFET 650 V Depletion, 4-Pin PowerPAK 8 x 8
