Vishay EF Type N-Channel Power MOSFET, 31 A, 600 V Enhancement, 8-Pin PowerPAK SIHR120N60EF-T1GE3

RS Stock No.:: 653-081
Mfr. Part No.:: SIHR120N60EF-T1GE3
Brand:: Vishay

Vishay EF Type N-Channel Power MOSFET, 31 A, 600 V Enhancement, 8-Pin PowerPAK SIHR120N60EF-T1GE3

Subtotal (1 reel of 3000 units)*

Kr. 101 751,00

(exc. VAT)

Kr. 127 188,00

(inc. VAT)

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Units	Per unit	Per Reel*
3000 +	Kr. 33,917	Kr. 101 751,00

*price indicative

RS Stock No.:: 653-081
Mfr. Part No.:: SIHR120N60EF-T1GE3
Brand:: Vishay

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Product Type	Power MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	31A
	Maximum Drain Source Voltage Vds	600V
	Package Type	PowerPAK
	Series	EF
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.125Ω
	Channel Mode	Enhancement
	Forward Voltage Vf	1.2V
	Maximum Power Dissipation Pd	278W
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	45nC
	Maximum Gate Source Voltage Vgs	30V
	Maximum Operating Temperature	150°C
	Length	10.42mm
	Width	8mm
	Standards/Approvals	RoHS
	Automotive Standard	No

	Select all
	Brand Vishay
	Product Type Power MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 31A
	Maximum Drain Source Voltage Vds 600V
	Package Type PowerPAK
	Series EF
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.125Ω
	Channel Mode Enhancement
	Forward Voltage Vf 1.2V
	Maximum Power Dissipation Pd 278W
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 45nC
	Maximum Gate Source Voltage Vgs 30V
	Maximum Operating Temperature 150°C
	Length 10.42mm
	Width 8mm
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - SIHR120N60EF-T1GE3

COO (Country of Origin):: CN

Vishay Series EF Power MOSFET, 600V Drain Source Voltage, 31A Maximum Continuous Drain Current - SIHR120N60EF-T1GE3

This power MOSFET is a high-voltage N-channel transistor designed for switching and power conversion roles in industrial and electronic systems. It operates as an enhancement-mode device suitable for applications requiring robust high-voltage handling, fast gate control and surface-mounted assembly.

Features and Benefits:

• 600V rating enables high-voltage switching applications • 31A continuous drain current supports substantial load handling • 0.125Ω on-resistance reduces conduction losses • 45nC typical gate charge allows predictable switching behaviour • 278W power dissipation permits high-power operation • -55°C to 150°C range supports wide thermal environments

Applications

• Suitable for high-voltage SMPS and power supplies • Ideal for industrial motor drives and inverters • Used for inductive load switching in automation systems • Can be used for high-voltage DC-DC converters • Suitable for power stages in welding and heating controls

What package and mounting form does it use for PCB assembly?

It is supplied in a PowerPAK surface-mount package with an 8-pin configuration suited to automated placement.

What gate voltage limits must designers observe?

The maximum gate-to-source rating is 30V, so gate drive circuits should remain within this boundary.

How should thermal management be approached for high-power tasks?

Design should account for the 278W dissipation capability with appropriate PCB copper, thermal vias or heatsinking to maintain junction temperatures within limits.

What maximum drain-source voltage can be expected during operation?

The device is rated to withstand up to 600V between drain and source under specified conditions.