Vishay E Type N-Channel Single MOSFETs, 32 A, 600 V Enhancement, 8-Pin PowerPAK
- RS Stock No.:
- 653-084
- Mfr. Part No.:
- SIHR120N60E-T1-GE3
- Brand:
- Vishay
Bulk discount available
Subtotal (1 tape of 1 unit)*
Kr.54 11
(exc. VAT)
Kr.67 64
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 4 000 unit(s) shipping from 29. desember 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Tape(s) | Per Tape |
|---|---|
| 1 - 9 | Kr. 54,11 |
| 10 - 49 | Kr. 52,62 |
| 50 - 99 | Kr. 50,91 |
| 100 + | Kr. 43,82 |
*price indicative
- RS Stock No.:
- 653-084
- Mfr. Part No.:
- SIHR120N60E-T1-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | Single MOSFETs | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 32A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | E | |
| Package Type | PowerPAK | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.12Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Typical Gate Charge Qg @ Vgs | 29nC | |
| Maximum Power Dissipation Pd | 278W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 8 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type Single MOSFETs | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 32A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series E | ||
Package Type PowerPAK | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.12Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Typical Gate Charge Qg @ Vgs 29nC | ||
Maximum Power Dissipation Pd 278W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 8 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay 4th generation E Series Power MOSFET optimized for high-performance switching applications. It offers a low figure of merit (FOM), reduced switching and conduction losses, and low effective capacitance. Packaged in the Compact PowerPAK 8x8LR, it's Ideal for use in server, telecom, lighting, and industrial power supplies.
Pb Free
Halogen free
RoHS compliant
Related links
- Vishay E Series N-Channel MOSFET 600 V, 8-Pin PowerPAK SIHR120N60E-T1-GE3
- Vishay E Series N-Channel MOSFET 600 V, 8-Pin PowerPAK SIHR100N60E-T1-GE3
- Vishay E Series N-Channel MOSFET 600 V, 4-Pin PowerPAK 8 x 8 SIHH26N60E-T1-GE3
- Vishay E Series Dual N-Channel MOSFET 650 V, 4-Pin PowerPAK 8 x 8 SiHH080N60E-T1-GE3
- Vishay E N-Channel MOSFET 600 V, 4-Pin PowerPAK 8 x 8 SIHH240N60E-T1-GE3
- Vishay E Series N-Channel MOSFET 850 V, 3-Pin DPAK SIHD11N80AE-T1-GE3
- Vishay E Series N-Channel MOSFET 600 V, 3-Pin TO-247AC SIHG47N60E-GE3
- Vishay E Series N-Channel MOSFET 600 V, 3-Pin TO-247AC SiHG30N60E-GE3
