Vishay SISS5812DN Type N-Channel Single MOSFETs, 42.8 A, 80 V Enhancement, 8-Pin PowerPAK SISS5812DN-T1-GE3

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Subtotal (1 reel of 3000 units)*

Kr.14 994 00 

(exc. VAT)

Kr.18 744 00 

(inc. VAT)

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Units
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Per Reel*
3000 +Kr. 4,998Kr. 14 994,00

*price indicative

RS Stock No.:
653-132
Mfr. Part No.:
SISS5812DN-T1-GE3
Brand:
Vishay
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Brand

Vishay

Product Type

Single MOSFETs

Channel Type

Type N

Maximum Continuous Drain Current Id

42.8A

Maximum Drain Source Voltage Vds

80V

Series

SISS5812DN

Package Type

PowerPAK

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0135Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

±20 V

Typical Gate Charge Qg @ Vgs

10nC

Maximum Power Dissipation Pd

44.6W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

No

Width

3.40 mm

Height

0.83mm

Length

3.40mm

Automotive Standard

No

COO (Country of Origin):
CN
The Vishay TrenchFET Gen V N-Channel Power MOSFET rated for 80 V drain-source voltage. Packaged in a Compact PowerPAK 1212-8S, it's Ideal for AI server power solutions, DC/DC converters, and load switching.

Pb Free

Halogen free

RoHS compliant

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