Vishay SIRA10DDP Type N-Channel Single MOSFETs, 96 A, 30 V Enhancement, 8-Pin PowerPAK

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Subtotal (1 tape of 1 unit)*

Kr. 4,58

(exc. VAT)

Kr. 5,72

(inc. VAT)

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1 - 24Kr. 4,58
25 - 99Kr. 4,00
100 - 499Kr. 3,66
500 - 999Kr. 3,20
1000 +Kr. 2,86

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RS Stock No.:
653-142
Mfr. Part No.:
SIRA10DDP-T1-GE3
Brand:
Vishay
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Brand

Vishay

Product Type

Single MOSFETs

Channel Type

Type N

Maximum Continuous Drain Current Id

96A

Maximum Drain Source Voltage Vds

30V

Package Type

PowerPAK

Series

SIRA10DDP

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0031Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

43W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

24nC

Forward Voltage Vf

1.1V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Height

1.04mm

Width

6.15 mm

Length

5.15mm

Automotive Standard

No

The Vishay N-channel MOSFET designed for high-efficiency switching in Compact power systems. It supports up to 30 V drain-source voltage. Packaged in PowerPAK SO-8, it utilizes TrenchFET Gen IV technology to deliver ultra-low RDS(on), fast switching, and excellent thermal performance.

Pb Free

Halogen free

RoHS compliant

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