Vishay SIRA10DDP N-Channel Single MOSFETs, 96 A, 30 V Enhancement, 8-Pin PowerPAK SIRA10DDP-T1-GE3

Subtotal (1 reel of 3000 units)*

Kr. 7 950,00

(exc. VAT)

Kr. 9 930,00

(inc. VAT)

Add to Basket
Select or type quantity
Last RS stock
  • Final 6 000 unit(s), ready to ship
Units
Per unit
Per Reel*
3000 +Kr. 2,65Kr. 7 950,00

*price indicative

RS Stock No.:
653-141
Mfr. Part No.:
SIRA10DDP-T1-GE3
Brand:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Product Type

Single MOSFETs

Channel Type

N

Maximum Continuous Drain Current Id

96A

Maximum Drain Source Voltage Vds

30V

Package Type

PowerPAK

Series

SIRA10DDP

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0031Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

43W

Maximum Gate Source Voltage Vgs

20V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

24nC

Forward Voltage Vf

1.1V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

5.15mm

Width

6.15mm

Height

1.04mm

Automotive Standard

No

The Vishay N-channel MOSFET designed for high-efficiency switching in Compact power systems. It supports up to 30 V drain-source voltage. Packaged in PowerPAK SO-8, it utilizes TrenchFET Gen IV technology to deliver ultra-low RDS(on), fast switching, and excellent thermal performance.

Pb Free

Halogen free

RoHS compliant

Related links

Be the first to know about our latest products and offers

Email address

The personal information you provide to us when signing up to this mailing list will be processed in line with the Privacy Policy