Vishay SIRA10DDP Type N-Channel Single MOSFETs, 96 A, 30 V Enhancement, 8-Pin PowerPAK SIRA10DDP-T1-GE3

Subtotal (1 reel of 3000 units)*

Kr. 7 959,00

(exc. VAT)

Kr. 9 948,00

(inc. VAT)

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Units
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Per Reel*
3000 +Kr. 2,653Kr. 7 959,00

*price indicative

RS Stock No.:
653-141
Mfr. Part No.:
SIRA10DDP-T1-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

Single MOSFETs

Maximum Continuous Drain Current Id

96A

Maximum Drain Source Voltage Vds

30V

Package Type

PowerPAK

Series

SIRA10DDP

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0031Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

24nC

Maximum Power Dissipation Pd

43W

Forward Voltage Vf

1.1V

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Width

6.15 mm

Height

1.04mm

Standards/Approvals

No

Length

5.15mm

Automotive Standard

No

The Vishay N-channel MOSFET designed for high-efficiency switching in Compact power systems. It supports up to 30 V drain-source voltage. Packaged in PowerPAK SO-8, it utilizes TrenchFET Gen IV technology to deliver ultra-low RDS(on), fast switching, and excellent thermal performance.

Pb Free

Halogen free

RoHS compliant

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