STMicroelectronics STP25 N channel-Channel Power MOSFET, 56 A, 250 V Enhancement, 3-Pin TO-220 STP25N018M9
- RS Stock No.:
- 711-524
- Mfr. Part No.:
- STP25N018M9
- Brand:
- STMicroelectronics
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Kr. 40,04
(exc. VAT)
Kr. 50,05
(inc. VAT)
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Units | Per unit |
|---|---|
| 1 - 9 | Kr. 40,04 |
| 10 - 24 | Kr. 35,24 |
| 25 - 99 | Kr. 31,57 |
| 100 - 499 | Kr. 26,08 |
| 500 + | Kr. 25,40 |
*price indicative
- RS Stock No.:
- 711-524
- Mfr. Part No.:
- STP25N018M9
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | Power MOSFET | |
| Channel Type | N channel | |
| Maximum Continuous Drain Current Id | 56A | |
| Maximum Drain Source Voltage Vds | 250V | |
| Package Type | TO-220 | |
| Series | STP25 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 18mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 85nC | |
| Forward Voltage Vf | 1.6V | |
| Maximum Power Dissipation Pd | 320W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 4.6mm | |
| Length | 15.75mm | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type Power MOSFET | ||
Channel Type N channel | ||
Maximum Continuous Drain Current Id 56A | ||
Maximum Drain Source Voltage Vds 250V | ||
Package Type TO-220 | ||
Series STP25 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 18mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 85nC | ||
Forward Voltage Vf 1.6V | ||
Maximum Power Dissipation Pd 320W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 4.6mm | ||
Length 15.75mm | ||
- COO (Country of Origin):
- CN
The STMicroelectronics N-channel Power MOSFET is based on the most innovative super-junction MDmesh M9 technology, suitable for medium/high voltage MOSFETs featuring very low RDS(on) per area. The silicon based M9 technology benefits from a multi-drain manufacturing process which allows an enhanced device structure. The resulting product has one of the lower on-resistance and reduced gate charge values, among all silicon based fast switching super-junction Power MOSFETs, making it particularly suitable for applications that require superior power density and outstanding efficiency.
Very low FOM (RDS(on)·Qg)
Higher dv/dt capability
Excellent switching performance
Easy to drive
100% avalanche tested
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