STMicroelectronics G-HEMT P-Channel Transistor, 29 A, 700 V Enhancement, 8-Pin PowerFLAT SGT080R70ILB
- RS Stock No.:
- 719-632
- Mfr. Part No.:
- SGT080R70ILB
- Brand:
- STMicroelectronics
Image representative of range
Subtotal (1 unit)*
Kr. 26,54
(exc. VAT)
Kr. 33,18
(inc. VAT)
FREE delivery for online orders over 500,00 kr
Temporarily out of stock
- Shipping from 23 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 + | Kr. 26,54 |
*price indicative
- RS Stock No.:
- 719-632
- Mfr. Part No.:
- SGT080R70ILB
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | P-Channel | |
| Product Type | Transistor | |
| Maximum Continuous Drain Current Id | 29A | |
| Maximum Drain Source Voltage Vds | 700V | |
| Series | G-HEMT | |
| Package Type | PowerFLAT | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 80mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | -6 to 7 V | |
| Maximum Power Dissipation Pd | 188W | |
| Typical Gate Charge Qg @ Vgs | 6.2nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 8.1 mm | |
| Height | 0.9mm | |
| Length | 8.1mm | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type P-Channel | ||
Product Type Transistor | ||
Maximum Continuous Drain Current Id 29A | ||
Maximum Drain Source Voltage Vds 700V | ||
Series G-HEMT | ||
Package Type PowerFLAT | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 80mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs -6 to 7 V | ||
Maximum Power Dissipation Pd 188W | ||
Typical Gate Charge Qg @ Vgs 6.2nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 8.1 mm | ||
Height 0.9mm | ||
Length 8.1mm | ||
- COO (Country of Origin):
- CN
The STMicroelectronics 700 V 29 A e-mode PowerGaN transistor combined with a well established packaging technology. The resulting G-HEMT device provides extremely low conduction losses, high current capability and ultra fast switching operation to enable high power density and unbeatable efficiency performances.
Enhancement mode normally off transistor
Very high switching speed
High power management capability
Extremely low capacitances
Kelvin source pad for optimum gate driving
Zero reverse recovery charge
ESD safeguard