STMicroelectronics G-HEMT P-Channel Transistor, 21.7 A, 700 V Enhancement, 8-Pin PowerFLAT SGT105R70ILB
- RS Stock No.:
- 719-633
- Mfr. Part No.:
- SGT105R70ILB
- Brand:
- STMicroelectronics
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Subtotal (1 unit)*
Kr. 21,96
(exc. VAT)
Kr. 27,45
(inc. VAT)
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Units | Per unit |
|---|---|
| 1 + | Kr. 21,96 |
*price indicative
- RS Stock No.:
- 719-633
- Mfr. Part No.:
- SGT105R70ILB
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | P-Channel | |
| Product Type | Transistor | |
| Maximum Continuous Drain Current Id | 21.7A | |
| Maximum Drain Source Voltage Vds | 700V | |
| Series | G-HEMT | |
| Package Type | PowerFLAT | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 105mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 4.8nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | -6 to 7 V | |
| Maximum Power Dissipation Pd | 158W | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.9mm | |
| Width | 8.1 mm | |
| Length | 8.1mm | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type P-Channel | ||
Product Type Transistor | ||
Maximum Continuous Drain Current Id 21.7A | ||
Maximum Drain Source Voltage Vds 700V | ||
Series G-HEMT | ||
Package Type PowerFLAT | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 105mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 4.8nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs -6 to 7 V | ||
Maximum Power Dissipation Pd 158W | ||
Maximum Operating Temperature 150°C | ||
Height 0.9mm | ||
Width 8.1 mm | ||
Length 8.1mm | ||
- COO (Country of Origin):
- CN
The STMicroelectronics 700 V 21.7 A e-mode PowerGaN transistor combined with a well established packaging technology. The resulting G-HEMT device provides extremely low conduction losses, high current capability and ultra fast switching operation to enable high power density and unbeatable efficiency performances.
Enhancement mode normally off transistor
Very high switching speed
High power management capability
Extremely low capacitances
Kelvin source pad for optimum gate driving
Zero reverse recovery charge
ESD safeguard