Vishay SiH N-Channel MOSFET, 48 A, 650 V Enhancement, 4-Pin PowerPAK SO-8 SIHK045N60E-T1GE3
- RS Stock No.:
- 735-154
- Mfr. Part No.:
- SIHK045N60E-T1GE3
- Brand:
- Vishay
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View bulk pricing optionsSubtotal (1 unit)*
Kr. 120,69
(exc. VAT)
Kr. 150,86
(inc. VAT)
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Units | Per unit |
|---|---|
| 1 - 9 | Kr. 120,69 |
| 10 - 49 | Kr. 74,82 |
| 50 - 99 | Kr. 57,89 |
| 100 + | Kr. 42,67 |
*price indicative
- RS Stock No.:
- 735-154
- Mfr. Part No.:
- SIHK045N60E-T1GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 48A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | PowerPAK SO-8 | |
| Series | SiH | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 0.043Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 278W | |
| Typical Gate Charge Qg @ Vgs | 65nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 600V | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Operating Temperature | 150°C | |
| Width | 10mm | |
| Length | 13mm | |
| Standards/Approvals | RoHS | |
| Height | 2mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 48A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type PowerPAK SO-8 | ||
Series SiH | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 0.043Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 278W | ||
Typical Gate Charge Qg @ Vgs 65nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 600V | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Operating Temperature 150°C | ||
Width 10mm | ||
Length 13mm | ||
Standards/Approvals RoHS | ||
Height 2mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- IL
The Vishay N-Channel MOSFET rated for 60V drain-source voltage, optimized for high-efficiency switching in AI power server DC/DC converters and synchronous rectification circuits. It achieves very low on-resistance of 1.7mΩ maximum at 10V gate drive for minimal conduction losses in high-current applications
94A continuous drain current at TA=25°C
54.3nC typical total gate charge for fast switching
-55°C to +175°C extended junction temperature range
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