Vishay SiH N-Channel MOSFET, 36 A, 650 V Enhancement, 4-Pin PowerPAK SO-8 SIHH070N60EF-T1GE3

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Kr. 81,80

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Kr. 102,25

(inc. VAT)

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Per unit
1 - 9Kr. 81,80
10 - 49Kr. 50,68
50 - 99Kr. 39,24
100 +Kr. 28,94

*price indicative

RS Stock No.:
735-160
Mfr. Part No.:
SIHH070N60EF-T1GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

36A

Maximum Drain Source Voltage Vds

650V

Package Type

PowerPAK SO-8

Series

SiH

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

0.061Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

202W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

50nC

Maximum Gate Source Voltage Vgs

30V

Forward Voltage Vf

600V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Width

8mm

Height

1mm

Length

8mm

Automotive Standard

No

COO (Country of Origin):
IL
The Vishay N-Channel MOSFET rated for 60V drain-source voltage, optimized for high-efficiency switching in AI power server DC/DC converters and synchronous rectification circuits. It achieves very low on-resistance of 1.7mΩ maximum at 10V gate drive for minimal conduction losses in high-current applications

94A continuous drain current at TA=25°C

54.3nC typical total gate charge for fast switching

-55°C to +175°C extended junction temperature range

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