Vishay SiH N channel-Channel MOSFET, 36 A, 650 V Enhancement, 4-Pin PowerPAK SO-8 SiHH070N60EF

Bulk discount available
View bulk pricing options

Subtotal (1 unit)*

Kr. 81,80

(exc. VAT)

Kr. 102,25

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 21 September 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units
Per unit
1 - 9Kr. 81,80
10 - 49Kr. 50,68
50 - 99Kr. 39,24
100 +Kr. 28,94

*price indicative

RS Stock No.:
735-160
Mfr. Part No.:
SiHH070N60EF
Brand:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Product Type

MOSFET

Channel Type

N channel

Maximum Continuous Drain Current Id

36A

Maximum Drain Source Voltage Vds

650V

Series

SiH

Package Type

PowerPAK SO-8

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

0.061Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

50nC

Maximum Power Dissipation Pd

202W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

30V

Forward Voltage Vf

600V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Length

8mm

Width

8mm

Height

1mm

Automotive Standard

No

COO (Country of Origin):
IL
The Vishay N-Channel MOSFET rated for 60V drain-source voltage, optimized for high-efficiency switching in AI power server DC/DC converters and synchronous rectification circuits. It achieves very low on-resistance of 1.7mΩ maximum at 10V gate drive for minimal conduction losses in high-current applications

94A continuous drain current at TA=25°C

54.3nC typical total gate charge for fast switching

-55°C to +175°C extended junction temperature range

Related links

Be the first to know about our latest products and offers

Email address

The personal information you provide to us when signing up to this mailing list will be processed in line with the Privacy Policy