Vishay SI2324BDS N channel-Channel MOSFET, 1.9 A, 100 V Enhancement, 3-Pin SOT-23 SI2324BDS-T1-GE3

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Subtotal (1 tape of 1 unit)*

Kr. 3,32

(exc. VAT)

Kr. 4,15

(inc. VAT)

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  • Shipping from 29 June 2027
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1 - 24Kr. 3,32
25 - 99Kr. 2,17
100 +Kr. 1,26

*price indicative

RS Stock No.:
736-344
Mfr. Part No.:
SI2324BDS-T1-GE3
Brand:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

N channel

Maximum Continuous Drain Current Id

1.9A

Maximum Drain Source Voltage Vds

100V

Package Type

SOT-23 (TO-236AB)

Series

SI2324BDS

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

0.21Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20V

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

1.86nC

Maximum Power Dissipation Pd

1.7W

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
IL
The Vishay N-Channel MOSFET designed to optimise power management applications, featuring a robust 100V drain-source voltage rating and enhanced thermal characteristics for efficient operation.

The high thermal resistance performance enhances reliability

Designed for LED backlighting and DC/DC converter applications

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