Vishay SI N-Channel MOSFET, 1.9 A, 100 V Enhancement, 6-Pin SOT-363 SI1480BDH-T1-GE3

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Subtotal (1 pack of 25 units)*

Kr. 122,05

(exc. VAT)

Kr. 152,55

(inc. VAT)

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Units
Per unit
Per Pack*
25 - 25Kr. 4,882Kr. 122,05
50 - 75Kr. 4,782Kr. 119,55
100 - 225Kr. 4,347Kr. 108,68
250 - 975Kr. 4,256Kr. 106,40
1000 +Kr. 4,173Kr. 104,33

*price indicative

Packaging Options:
RS Stock No.:
279-9891
Mfr. Part No.:
SI1480BDH-T1-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

1.9A

Maximum Drain Source Voltage Vds

100V

Package Type

SOT-363

Series

SI

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

0.212Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

1.7W

Maximum Gate Source Voltage Vgs

20V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

6nC

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

The Vishay MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon.

TrenchFET power MOSFET

100 percent Rg and UIS tested

Fully lead (Pb)-free device

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