Vishay SI N-Channel MOSFET, 17 A, 100 V Enhancement, 8-Pin SO-8 SI4190BDY-T1-GE3
- RS Stock No.:
- 279-9895
- Mfr. Part No.:
- SI4190BDY-T1-GE3
- Brand:
- Vishay
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 4 units)*
Kr. 137,28
(exc. VAT)
Kr. 171,60
(inc. VAT)
FREE delivery for online orders over 750,00 kr
Temporarily out of stock
- 424 unit(s) shipping from 28 September 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 4 - 56 | Kr. 34,32 | Kr. 137,28 |
| 60 - 96 | Kr. 32,203 | Kr. 128,81 |
| 100 - 236 | Kr. 28,658 | Kr. 114,63 |
| 240 - 996 | Kr. 28,17 | Kr. 112,68 |
| 1000 + | Kr. 27,628 | Kr. 110,51 |
*price indicative
- RS Stock No.:
- 279-9895
- Mfr. Part No.:
- SI4190BDY-T1-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 17A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | SI | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.093Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 95nC | |
| Maximum Power Dissipation Pd | 8.4W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 17A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series SI | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.093Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 95nC | ||
Maximum Power Dissipation Pd 8.4W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Vishay MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon.
TrenchFET power MOSFET
Fully lead (Pb)-free device
Very low RDS x Qg figure of merit
100 percent Rg and UIS tested
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