Vishay SI Type N-Channel MOSFET, 1.8 A, 100 V Enhancement, 3-Pin SOT-23 SI2392BDS-T1-GE3
- RS Stock No.:
- 279-9893
- Mfr. Part No.:
- SI2392BDS-T1-GE3
- Brand:
- Vishay
Bulk discount available
Subtotal (1 pack of 20 units)*
Kr. 115,54
(exc. VAT)
Kr. 144,42
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 20 | Kr. 5,777 | Kr. 115,54 |
| 40 - 80 | Kr. 5,051 | Kr. 101,02 |
| 100 - 280 | Kr. 4,519 | Kr. 90,38 |
| 300 - 980 | Kr. 4,422 | Kr. 88,44 |
| 1000 + | Kr. 4,325 | Kr. 86,50 |
*price indicative
- RS Stock No.:
- 279-9893
- Mfr. Part No.:
- SI2392BDS-T1-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 1.8A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | SOT-23 | |
| Series | SI | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.149Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 7.1nC | |
| Maximum Power Dissipation Pd | 1.1W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 1.8A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type SOT-23 | ||
Series SI | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.149Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 7.1nC | ||
Maximum Power Dissipation Pd 1.1W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Vishay MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon.
TrenchFET power MOSFET
Fully lead (Pb)-free device
Very low RDS x Qg figure of merit
100 percent Rg and UIS tested
Related links
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