Vishay SI N-Channel MOSFET, 1.8 A, 100 V Enhancement, 3-Pin SOT-23 SI2392BDS-T1-GE3

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Subtotal (1 pack of 20 units)*

Kr. 133,40

(exc. VAT)

Kr. 166,80

(inc. VAT)

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Units
Per unit
Per Pack*
20 - 20Kr. 6,67Kr. 133,40
40 - 80Kr. 5,835Kr. 116,70
100 - 280Kr. 5,217Kr. 104,34
300 - 980Kr. 5,102Kr. 102,04
1000 +Kr. 4,988Kr. 99,76

*price indicative

Packaging Options:
RS Stock No.:
279-9893
Mfr. Part No.:
SI2392BDS-T1-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

1.8A

Maximum Drain Source Voltage Vds

100V

Series

SI

Package Type

SOT-23

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

0.149Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

1.1W

Maximum Gate Source Voltage Vgs

20V

Typical Gate Charge Qg @ Vgs

7.1nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

The Vishay MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon.

TrenchFET power MOSFET

Fully lead (Pb)-free device

Very low RDS x Qg figure of merit

100 percent Rg and UIS tested

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