Vishay SI Type N-Channel MOSFET, 17 A, 100 V Enhancement, 8-Pin SO-8 SI4190BDY-T1-GE3
- RS Stock No.:
- 279-9894
- Mfr. Part No.:
- SI4190BDY-T1-GE3
- Brand:
- Vishay
Subtotal (1 reel of 2500 units)*
Kr. 26 290,00
(exc. VAT)
Kr. 32 862,50
(inc. VAT)
FREE delivery for online orders over 750,00 kr
In Stock
- Plus 2 500 unit(s) shipping from 01 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 2500 + | Kr. 10,516 | Kr. 26 290,00 |
*price indicative
- RS Stock No.:
- 279-9894
- Mfr. Part No.:
- SI4190BDY-T1-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 17A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | SI | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.093Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 95nC | |
| Maximum Power Dissipation Pd | 8.4W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 17A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series SI | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.093Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 95nC | ||
Maximum Power Dissipation Pd 8.4W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Vishay MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon.
TrenchFET power MOSFET
Fully lead (Pb)-free device
Very low RDS x Qg figure of merit
100 percent Rg and UIS tested
Related links
- Vishay SI Type N-Channel MOSFET 100 V Enhancement, 8-Pin SO-8 SI4190BDY-T1-GE3
- Vishay SI Type N-Channel MOSFET 150 V Enhancement, 8-Pin SO-8 SI4848BDY-T1-GE3
- Vishay SI Type N-Channel MOSFET 100 V Enhancement, 6-Pin SOT-363 SI1480BDH-T1-GE3
- Vishay SI Type N-Channel MOSFET 100 V Enhancement, 3-Pin SOT-23 SI2392BDS-T1-GE3
- onsemi PowerTrench Type N-Channel MOSFET 100 V Enhancement, 8-Pin PQFN
- onsemi PowerTrench Type N-Channel MOSFET 100 V Enhancement, 8-Pin PQFN FDMS8622
- Nexperia PXN Type N-Channel MOSFET 100 V Enhancement, 8-Pin MLPAK PXN040-100QSJ
- ROHM HP8K 2 Type N-Channel MOSFET 100 V Enhancement, 8-Pin HSOP-8 HP8KE6TB1