Vishay SIEH3812EW N channel-Channel MOSFET, 322 A, 80 V Enhancement, 8-Pin PowerPAK 8 x 8 SIEH3812EW-T1-GE3

Subtotal (1 tape of 1 unit)*

Kr. 70,70

(exc. VAT)

Kr. 88,38

(inc. VAT)

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  • Shipping from 17 May 2027
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Tape(s)
Per Tape
1 +Kr. 70,70

*price indicative

RS Stock No.:
736-346
Mfr. Part No.:
SIEH3812EW-T1-GE3
Brand:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

N channel

Maximum Continuous Drain Current Id

322A

Maximum Drain Source Voltage Vds

80V

Series

SIEH3812EW

Package Type

PowerPAK 8 x 8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.00175Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

154nC

Forward Voltage Vf

1.1V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20V

Maximum Power Dissipation Pd

417W

Maximum Operating Temperature

175°C

Length

8mm

Standards/Approvals

RoHS

Width

8mm

Automotive Standard

No

COO (Country of Origin):
DE
The Vishay Power MOSFET delivers exceptional performance in high-efficiency applications, featuring an N-Channel design that supports significant continuous drain current, Ideal for Advanced energy management solutions.

Fully lead (Pb)-free and halogen-free construction for environmental compliance

Tested at 100% for R and UIS to guarantee reliability

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