Infineon OptiMOS N channel-Channel Power MOSFET, 510 A, 60 V Enhancement, 12-Pin PG-TSON-12 IQFH61N06NM5ATMA1

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Kr. 62,35

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Kr. 77,94

(inc. VAT)

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RS Stock No.:
762-983
Mfr. Part No.:
IQFH61N06NM5ATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N channel

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

510A

Maximum Drain Source Voltage Vds

60V

Package Type

PG-TSON-12

Series

OptiMOS

Mount Type

Surface Mount

Pin Count

12

Maximum Drain Source Resistance Rds

0.61mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

190nC

Maximum Power Dissipation Pd

300W

Forward Voltage Vf

1.1V

Maximum Operating Temperature

175°C

Length

8mm

Standards/Approvals

RoHS

Height

1.1mm

Automotive Standard

No

COO (Country of Origin):
MY
The Infineon OptiMOS 5Power-Transistor,60V optimized for low voltage drives, battery powered and synchronous rectification application. Fully qualified according to JEDEC for industrial applications.

100% avalanche tested

Superior thermal resistance

N-channel

Pb-free lead plating, RoHS compliant

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