Microchip Half Bridge mSiC N-Channel SiC Power Module, 151 A, 3.3 kV Enhancement Mode MSCSM330AM15D3NG
- RS Stock No.:
- 854-513
- Mfr. Part No.:
- MSCSM330AM15D3NG
- Brand:
- Microchip
Image representative of range
Subtotal (1 unit)*
Kr. 5 278,53
(exc. VAT)
Kr. 6 598,16
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit |
|---|---|
| 1 + | Kr. 5 278,53 |
*price indicative
- RS Stock No.:
- 854-513
- Mfr. Part No.:
- MSCSM330AM15D3NG
- Brand:
- Microchip
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Microchip | |
| Product Type | SiC Power Module | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 151A | |
| Maximum Drain Source Voltage Vds | 3.3kV | |
| Series | mSiC | |
| Mount Type | Heatsink | |
| Channel Mode | Enhancement Mode | |
| Maximum Power Dissipation Pd | 1013W | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Transistor Configuration | Half Bridge | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Microchip | ||
Product Type SiC Power Module | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 151A | ||
Maximum Drain Source Voltage Vds 3.3kV | ||
Series mSiC | ||
Mount Type Heatsink | ||
Channel Mode Enhancement Mode | ||
Maximum Power Dissipation Pd 1013W | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Transistor Configuration Half Bridge | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Microchip silicon carbide power module offers a phase leg configuration to effectively control high-voltage power applications through superior efficiency and reliability.
Designed with low on-resistance for efficient operation under high temperatures
Includes a robust plastic enclosure for improved creepage and clearance
Features a Kelvin source to simplify the gate drive
Constructed with a copper baseplate for superior thermal management
Related links
- Microchip Half Bridge mSiC N-Channel SiC Power Module 3300 V Enhancement Mode MSCSM330AM15CD3NG
- Microchip Half Bridge mSiC N-Channel SiC Power Module 3300 V Enhancement Mode MSCSM330DUM07CD3NG
- Microchip Half Bridge mSiC N-Channel SiC Power Module 3300 V Enhancement Mode MSCSM330AM07CD3NG
- Microchip Half Bridge mSiC N-Channel SiC Power Module 3300 V Enhancement Mode MSCSM330AM07D3NG
- Microchip Half Bridge mSiC N-Channel SiC Power Module 3300 V Enhancement Mode MSCSM330DUM07D3NG
- ROHM Half Bridge BSM N-Channel SiC Power Module 1200 V Enhancement, 4-Pin BSM120D12P2C005
- Microchip Half Bridge Phase Leg SiC MOSFET N channel-Channel MOSFET Modules 1200 V Enhancement
- Littelfuse N-Channel SiC Power Module 12 V Enhancement, 3-Pin TO-220 IXFP36N60X3