Microchip Half Bridge mSiC N channel-Channel SiC Power Module, 295 A, 3300 V Enhancement Mode MSCSM330DUM07D3NG

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Subtotal (1 unit)*

Kr. 7 805,36

(exc. VAT)

Kr. 9 756,70

(inc. VAT)

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1 +Kr. 7 805,36

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RS Stock No.:
854-517
Mfr. Part No.:
MSCSM330DUM07D3NG
Brand:
Microchip
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Brand

Microchip

Product Type

SiC Power Module

Channel Type

N channel

Maximum Continuous Drain Current Id

295A

Maximum Drain Source Voltage Vds

3300V

Series

mSiC

Mount Type

Heatsink

Channel Mode

Enhancement Mode

Minimum Operating Temperature

-40°C

Maximum Power Dissipation Pd

1918W

Transistor Configuration

Half Bridge

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

The Microchip silicon carbide power module designed for high-performance applications, delivering dual common source functionality with exceptional reliability under challenging conditions. This device effectively manages high voltage and current requirements.

Kelvin source simplifies gate drive, enhancing performance

Designed for high thermal performance with low junction-to-case thermal resistance

RoHS compliant, ensuring environmental safety

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