Microchip Half Bridge mSiC N channel-Channel SiC Power Module, 295 A, 3300 V Enhancement Mode MSCSM330DUM07CD3NG

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Subtotal (1 unit)*

Kr. 9 559,88

(exc. VAT)

Kr. 11 949,85

(inc. VAT)

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  • Shipping from 08 February 2027
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Units
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1 +Kr. 9 559,88

*price indicative

RS Stock No.:
854-514
Mfr. Part No.:
MSCSM330DUM07CD3NG
Brand:
Microchip
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Brand

Microchip

Channel Type

N channel

Product Type

SiC Power Module

Maximum Continuous Drain Current Id

295A

Maximum Drain Source Voltage Vds

3300V

Series

mSiC

Mount Type

Heatsink

Channel Mode

Enhancement Mode

Minimum Operating Temperature

-40°C

Maximum Power Dissipation Pd

1918W

Transistor Configuration

Half Bridge

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

The Microchip silicon carbide power module combines dual common source functionality with high voltage capabilities, designed for efficient operation and superior performance in demanding applications.

Low R DS(on) ensures minimal power loss

Temperature-independent switching behaviour enhances reliability

Copper baseplate provides excellent thermal management

RoHS compliant for environmentally friendly operations

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