STMicroelectronics Type N-Channel MOSFET, 40 A, 600 V Enhancement, 4-Pin ISOTOP
- RS Stock No.:
- 103-1568
- Mfr. Part No.:
- STE40NC60
- Brand:
- STMicroelectronics
Bulk discount available
Subtotal (1 tube of 10 units)*
Kr.3 676 36
(exc. VAT)
Kr.4 595 45
(inc. VAT)
FREE delivery for online orders over 500,00 kr
Temporarily out of stock
- Shipping from 08. juni 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 10 - 40 | Kr. 367,636 | Kr. 3 676,36 |
| 50 - 90 | Kr. 351,094 | Kr. 3 510,94 |
| 100 - 190 | Kr. 309,555 | Kr. 3 095,55 |
| 200 - 490 | Kr. 288,963 | Kr. 2 889,63 |
| 500 + | Kr. 268,371 | Kr. 2 683,71 |
*price indicative
- RS Stock No.:
- 103-1568
- Mfr. Part No.:
- STE40NC60
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | ISOTOP | |
| Mount Type | Panel | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 130mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.3V | |
| Maximum Power Dissipation Pd | 460W | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Typical Gate Charge Qg @ Vgs | 307.5nC | |
| Minimum Operating Temperature | -65°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 25.5 mm | |
| Standards/Approvals | No | |
| Length | 38.2mm | |
| Height | 9.1mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type ISOTOP | ||
Mount Type Panel | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 130mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.3V | ||
Maximum Power Dissipation Pd 460W | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Typical Gate Charge Qg @ Vgs 307.5nC | ||
Minimum Operating Temperature -65°C | ||
Maximum Operating Temperature 150°C | ||
Width 25.5 mm | ||
Standards/Approvals No | ||
Length 38.2mm | ||
Height 9.1mm | ||
Automotive Standard No | ||
N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Related links
- STMicroelectronics MDmesh 40 A 4-Pin ISOTOP STE40NC60
- STMicroelectronics MDmesh 53 A 4-Pin ISOTOP STE53NC50
- STMicroelectronics MDmesh 4 A 3-Pin D2PAK STB4NK60ZT4
- STMicroelectronics MDmesh 4 A 3-Pin TO-220 STP4NK60Z
- STMicroelectronics MDmesh 400 mA 3-Pin TO-92 STQ1HNK60R-AP
- STMicroelectronics MDmesh 1 A 3-Pin DPAK STD1NK60T4
- STMicroelectronics MDmesh 10 A 3-Pin TO-220FP STP10NK60ZFP
- STMicroelectronics MDmesh 7 A 3-Pin TO-220 STP9NK60Z
