STMicroelectronics MDmesh, SuperMESH Type N-Channel MOSFET, 400 mA, 600 V Enhancement, 4-Pin SOT-223 STN1HNK60
- RS Stock No.:
- 687-5131
- Distrelec Article No.:
- 304-43-897
- Mfr. Part No.:
- STN1HNK60
- Brand:
- STMicroelectronics
Bulk discount available
Subtotal (1 pack of 10 units)*
Kr.94 04
(exc. VAT)
Kr.117 55
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- 40 unit(s) ready to ship
- Plus 3 500 unit(s) shipping from 16. februar 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 10 | Kr. 9,404 | Kr. 94,04 |
| 20 + | Kr. 8,935 | Kr. 89,35 |
*price indicative
- RS Stock No.:
- 687-5131
- Distrelec Article No.:
- 304-43-897
- Mfr. Part No.:
- STN1HNK60
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 400mA | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | MDmesh, SuperMESH | |
| Package Type | SOT-223 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 8.5Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 3.3W | |
| Forward Voltage Vf | 1.6V | |
| Typical Gate Charge Qg @ Vgs | 7nC | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.5mm | |
| Standards/Approvals | No | |
| Height | 1.8mm | |
| Width | 3.5 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 400mA | ||
Maximum Drain Source Voltage Vds 600V | ||
Series MDmesh, SuperMESH | ||
Package Type SOT-223 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 8.5Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 3.3W | ||
Forward Voltage Vf 1.6V | ||
Typical Gate Charge Qg @ Vgs 7nC | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Operating Temperature 150°C | ||
Length 6.5mm | ||
Standards/Approvals No | ||
Height 1.8mm | ||
Width 3.5 mm | ||
Automotive Standard No | ||
N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
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