STMicroelectronics SuperMESH Type N-Channel MOSFET, 300 mA, 600 V Enhancement, 4-Pin SOT-223 STN1NK60Z

View all MOSFETs

Subtotal (1 reel of 4000 units)*

Kr.8 348 00 

(exc. VAT)

Kr.10 436 00 

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 20. april 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Reel*
4000 +Kr. 2,087Kr. 8 348,00

*price indicative

RS Stock No.:
151-927
Mfr. Part No.:
STN1NK60Z
Brand:
STMicroelectronics
Find similar products by selecting one or more attributes.
Select all

Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

300mA

Maximum Drain Source Voltage Vds

600V

Package Type

SOT-223

Series

SuperMESH

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

15Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

4.9nC

Forward Voltage Vf

1.6V

Maximum Gate Source Voltage Vgs

±30 V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Length

6.7mm

Width

3.7 mm

Height

1.8mm

Automotive Standard

No

COO (Country of Origin):
CN
The STMicroelectronics Power MOSFET developed using Super MESH technology, achieved through optimization of well established strip based Power MESH layout. In addition to a significant reduction in on resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.

100% avalanche tested

Gate charge minimized

SD improved capability

Zener protected

Related links