STMicroelectronics SuperMESH Type N-Channel MOSFET, 300 mA, 600 V Enhancement, 4-Pin SOT-223 STN1NK60Z

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Subtotal (1 tape of 20 units)*

Kr.63 04 

(exc. VAT)

Kr.78 80 

(inc. VAT)

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20 - 180Kr. 3,152Kr. 63,04
200 - 480Kr. 2,998Kr. 59,96
500 - 980Kr. 2,774Kr. 55,48
1000 - 1980Kr. 2,551Kr. 51,02
2000 +Kr. 2,46Kr. 49,20

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Packaging Options:
RS Stock No.:
151-928
Mfr. Part No.:
STN1NK60Z
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

300mA

Maximum Drain Source Voltage Vds

600V

Series

SuperMESH

Package Type

SOT-223

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

15Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

4.9nC

Maximum Gate Source Voltage Vgs

±30 V

Forward Voltage Vf

1.6V

Maximum Operating Temperature

150°C

Height

1.8mm

Width

3.7 mm

Standards/Approvals

RoHS

Length

6.7mm

Automotive Standard

No

Distrelec Product Id

304-37-475

COO (Country of Origin):
CN
The STMicroelectronics Power MOSFET developed using Super MESH technology, achieved through optimization of well established strip based Power MESH layout. In addition to a significant reduction in on resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.

100% avalanche tested

Gate charge minimized

SD improved capability

Zener protected

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