Infineon OptiMOS 5 Type N-Channel Power Transistor, 120 A, 100 V Enhancement, 3-Pin TO-220 IPP023N10N5AKSA1
- RS Stock No.:
- 110-7116
- Mfr. Part No.:
- IPP023N10N5AKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 4 units)*
Kr.220 332
(exc. VAT)
Kr.275 416
(inc. VAT)
FREE delivery for online orders over 500,00 kr
Stock information currently inaccessible
Units | Per unit | Per Pack* |
|---|---|---|
| 4 - 4 | Kr. 55,083 | Kr. 220,33 |
| 8 - 16 | Kr. 52,338 | Kr. 209,35 |
| 20 - 36 | Kr. 47,075 | Kr. 188,30 |
| 40 + | Kr. 46,818 | Kr. 187,27 |
*price indicative
- RS Stock No.:
- 110-7116
- Mfr. Part No.:
- IPP023N10N5AKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | Power Transistor | |
| Maximum Continuous Drain Current Id | 120A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-220 | |
| Series | OptiMOS 5 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2.3mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 168nC | |
| Maximum Power Dissipation Pd | 375W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Height | 15.95mm | |
| Width | 4.57 mm | |
| Standards/Approvals | RoHS, Pb-Free, JEDEC (J-STD20 and JESD22) | |
| Length | 10.36mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type Power Transistor | ||
Maximum Continuous Drain Current Id 120A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-220 | ||
Series OptiMOS 5 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2.3mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 168nC | ||
Maximum Power Dissipation Pd 375W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Height 15.95mm | ||
Width 4.57 mm | ||
Standards/Approvals RoHS, Pb-Free, JEDEC (J-STD20 and JESD22) | ||
Length 10.36mm | ||
Automotive Standard No | ||
RoHS Status: Not Applicable
Infineon OptiMOS™5 Power MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Related links
- Infineon OptiMOS 5 Type N-Channel Power Transistor 100 V Enhancement, 3-Pin TO-220
- Infineon OptiMOS P Type P-Channel Power Transistor 40 V Enhancement, 3-Pin TO-263
- Infineon OptiMOS P Type P-Channel Power Transistor 40 V Enhancement, 3-Pin TO-220
- Infineon OptiMOS P Type P-Channel Power Transistor 40 V Enhancement, 3-Pin TO-220 IPP120P04P4L03AKSA1
- Infineon OptiMOS P Type P-Channel Power Transistor 40 V Enhancement, 3-Pin TO-263 IPB120P04P4L03ATMA1
- Infineon OptiMOS -T2 Type N-Channel Power Transistor 60 V Enhancement, 3-Pin TO-263
- Infineon OptiMOS 3 Type N-Channel Power Transistor 30 V Enhancement, 3-Pin TO-220
- Infineon OptiMOS 3 Type N-Channel Power Transistor 30 V Enhancement, 3-Pin TO-220 IPP055N03LGXKSA1