Infineon OptiMOS 5 Type N-Channel Power Transistor, 120 A, 100 V Enhancement, 3-Pin TO-220 IPP023N10N5AKSA1

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Subtotal (1 pack of 4 units)*

Kr.218 552 

(exc. VAT)

Kr.273 192 

(inc. VAT)

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Per unit
Per Pack*
4 +Kr. 54,638Kr. 218,55

*price indicative

Packaging Options:
RS Stock No.:
110-7116
Mfr. Part No.:
IPP023N10N5AKSA1
Brand:
Infineon
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Brand

Infineon

Product Type

Power Transistor

Channel Type

Type N

Maximum Continuous Drain Current Id

120A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-220

Series

OptiMOS 5

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

2.3mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

168nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

375W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Width

4.57 mm

Length

10.36mm

Standards/Approvals

RoHS, Pb-Free, JEDEC (J-STD20 and JESD22)

Height

15.95mm

Automotive Standard

No

RoHS Status: Not Applicable

Infineon OptiMOS™5 Power MOSFETs


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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