Infineon OptiMOS 5 Type N-Channel MOSFET, 80 A, 80 V Enhancement, 3-Pin TO-220
- RS Stock No.:
- 214-9082
- Mfr. Part No.:
- IPP052N08N5AKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 tube of 50 units)*
Kr.988 40
(exc. VAT)
Kr.1 235 50
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 1 200 unit(s) shipping from 19. januar 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | Kr. 19,768 | Kr. 988,40 |
| 100 - 200 | Kr. 16,011 | Kr. 800,55 |
| 250 - 450 | Kr. 15,023 | Kr. 751,15 |
| 500 - 950 | Kr. 14,234 | Kr. 711,70 |
| 1000 + | Kr. 13,641 | Kr. 682,05 |
*price indicative
- RS Stock No.:
- 214-9082
- Mfr. Part No.:
- IPP052N08N5AKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 80A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | TO-220 | |
| Series | OptiMOS 5 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 5.2mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 42nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 125W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Height | 9.45mm | |
| Length | 10.36mm | |
| Width | 4.57 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 80A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type TO-220 | ||
Series OptiMOS 5 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 5.2mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 42nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 125W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Height 9.45mm | ||
Length 10.36mm | ||
Width 4.57 mm | ||
Automotive Standard No | ||
The Infineon range offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and Strong IRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs. These latest generation of power MOSFETs, are especially designed for synchronous rectification in telecom and server power supplies.
Qualified according to JEDEC1 for target applications
100% avalanche tested
Related links
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