Infineon OptiMOS 5 80V Type N-Channel MOSFET, 80 A, 80 V Enhancement, 3-Pin TO-263

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Subtotal (1 reel of 1000 units)*

Kr.11 623 00 

(exc. VAT)

Kr.14 529 00 

(inc. VAT)

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1000 +Kr. 11,623Kr. 11 623,00

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RS Stock No.:
215-2495
Mfr. Part No.:
IPB049N08N5ATMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

80A

Maximum Drain Source Voltage Vds

80V

Series

OptiMOS 5 80V

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

49mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

125W

Typical Gate Charge Qg @ Vgs

53nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Infineon’s OptiMOS™ 5 80V industrial power MOSFET IPB049N08N5 offers a RDS(on) reduction of 43% compared to previous generations and is ideally suited for high switching frequencies. The devices of this family are especially designed for synchronous rectification in telecom and server power supplies. In addition, they can also be utilized in other industrial applications such as solar, low voltage drives and adapters.

Optimized for synchronous rectification

Ideal for high switching frequency

Output capacitance reduction of up to 44%

RDS(on) reduction of up to 44%

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